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Spin Precession in Graphene
Non-local Hanle spin precession devices are fabricated on wafer scale epitaxial graphene utilizing conventional and scalable processing methods. To improve spin injection and reduce contact related spin relaxation, hafnium oxide is utilized as an interface barrier between the graphene on SiC(0001) and ferromagnetic metal contacts. The hafnium oxide layer is deposited by ALD utilizing an organic seed layer. Spin precession is observed in the epitaxial graphene.