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ResearchDiscoveries
Schottky Barrier Mapping and Measurement| The Schottky barrier is an electrostatic barrier between a metal and a semiconductor that has a high technological relevance in modern integrated circuits and devices. The barrier height is intimately tied to the bonding and charge transfer that occurs at the interface. The barrier height can fluctuate laterally ... more |
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Interface Band Structure Effects| Marked differences in the attenuation length of hot electrons are observed at biases near the Schottky barrier depending upon the substrate orientation, increasing by an order of magnitude for Si(001) and not for Si(111). These results provide clear evidence that the crystallographic orientation of the semiconductor substrate and parallel momentum ... more |
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Spin Precession in Graphene| Non-local Hanle spin precession devices are fabricated on wafer scale epitaxial graphene utilizing conventional and scalable processing methods. To improve spin injection and reduce contact related spin relaxation, hafnium oxide is utilized as an interface barrier between the graphene on SiC(0001) and ferromagnetic metal contacts. The hafnium oxide layer is ... more |
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Techniques
Ballistic Electron Emission Microscopy| Ballistic electron emission microscopy (BEEM) is a three terminal STM technique that can measure the Schottky barrier height between a metal and semiconductor. It can also measure carrier transport through materials and material interfaces with nanoscale resolution. It is an ideal technique to study the nanoscale fluctuations in ... more |
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Scanning Tunneling Microscopy| Scanning Tunneling Microscopy (STM) is a technique that can image a surface with atomic scale ... more |
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Vibrating Sample Magnetometry| Vibrating Sample Magnetometry (VSM) is a technique that can measure the magnetic properties of ... more |
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