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LaBella Group
PublicationsShow Abstracts
Detection of Silicide Formation in Nanoscale Visualization of Interface Electrostatics,
Westly Nolting, Chris Durcan, Vincent P. LaBella,
Applied Physics Letters, 110 141606 (2017).
(full text and abstract) DOI: 10.1063/1.4979874

Economical rotatable holder for magneto-transport measurements,
Avyaya J. Narasimham, Daniel Pennock, Graham J. Potter, Brian Taylor, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 35 023201 (2017).
(full text and abstract) DOI: 10.1116/1.4974488

Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy,
Westly Nolting, Chris Durcan, Avyaya J. Narasimham, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 34 04J110 (2016).
(full text and abstract) DOI: 10.1116/1.4958721

Relating Spatially Resolved Maps of the Schottky Barrier Height to Metal/Semiconductor Interface Composition,
Robert Balsano, Chris Durcan, Akitomo Matsubayashi, Avyaya J. Narasimham, Vincent P. LaBella,
Journal of Applied Physics, 119 095302 (2016).
(full text and abstract) DOI: 10.1063/1.4942659

Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing Ballistic Electron Emission Microscopy,
Chris A. Durcan, Robert Balsano, Vincent P. LaBella,
Journal of Applied Physics, 117 245306 (2015).
(full text and abstract) DOI: 10.1063/1.4922972

Pulsed-N2 assisted growth of 5-20 nm thick β-W films,
Avyaya J. Narasimham, Richard J. Matyi, Avery Grene, Prasanna Khare, Tuan Vo, Alain Diebold, Vincent P. LaBella,
AIP Advances, 5 117107 (2015).
(full text and abstract) DOI: 10.1063/1.4935372

Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes,
Girish Malladi, Mengbing Huang, Thomas Murray, Steven Novak, Akitomo Matsubayashi, Vincent LaBella, Hassaram Bakhru,
Journal of Applied Physics, 116 054306 (2014).
(full text and abstract) DOI: 10.1063/1.4892096

Microstructure fabrication process induced modulations in CVD graphene,
Akitomo Matsubayashi, Zhenjun Zhang, Ji Ung Lee, Vincent P. LaBella,
AIP Advances, 4 127143 (2014).
(full text and abstract) DOI: 10.1063/1.4905068

Fabrication of 5-20 nm thick b-W films,
Avyaya J. Narasimham, Manasa Medikonda, Akitomo Matsubayashi, Prasanna Khare, Hyuncher Chong, Richard J. Matyi, Alain Diebold, Vincent P. LaBella,
AIP Advances, 4 117139 (2014).
(full text and abstract) DOI: 10.1063/1.4903165

Nanoscale Mapping of the W/Si(001) Schottky Barrier,
Chris A. Durcan, Robert Balsano, Vincent P. LaBella,
Journal of Applied Physics, 116 023705 (2014).
(full text and abstract) DOI: 10.1063/1.4889851

Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy,
Robert Balsano, Akitomo Matsubayashi, Vincent P. LaBella,
AIP Advances, 3 112110 (2013).
(full text and abstract) DOI: 10.1063/1.4831756

Characterization of Metal Oxide Layers Grown on CVD Graphene,
Akitomo Matsubayashi, Joseph Abel, Dhiraj Prasad Sinha, Ji Ung Lee, Vincent P. LaBella,
Journal of Vacuum Science and Technology A, 31 021506 (2013).
(full text and abstract) DOI: 10.1116/1.4792068

Signatures of the semiconductor crystallographic orientation on the charge transport across non-epitaxial diodes,
John J. Garramone, Joseph R. Abel, Salvador Barraza-Lopez, Vincent P. LaBella,
Applied Physics Letters, 100 252102 (2012).
(full text and abstract) DOI: 10.1063/1.4729622

Fabrication of an Electrical Spin Transport Device utilizing a Diazonium Salt/Hafnium Oxide Interface Layer on Epitaxial Graphene grown on 6H-SiC(0001),
J. Abel, A. Matsubayashi, T. Murray, C. Dimitrakopoulos, D. B. Farmer, Ali Afzali, A. Grill, C. Y Sung, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 04E109 (2012).
(full text and abstract) DOI: 10.1116/1.4732460

Low Cost Cyrogenic High Vacuum Sample Holder for In-Plane Magneto-transport Studies,
Joseph Abel, Akitomo Matsubayashi, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 043201 (2012).
(full text and abstract) DOI: 10.1116/1.4732506

Schottky barrier and attenuation length for hot hole injection in non-epitaxial Au on p type GaAs,
Ilona Sitnitsky, John J. Garramone, Joseph Abel, Peng Xu, Steven D. Barber, Matt L. Ackerman, J. Kevin Schoelz, Paul M. Thibado, Vincent P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 04E110 (2012).
(full text and abstract) DOI: 10.1116/1.4734307

Temperature Dependent Spin Precession Measurements in Tri-Layer Graphene Utilizing Co/Graphene Contacts,
J. Abel, A. Matsubayashi, J. J. Garramone, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 30 03D115 (2012).
(full text and abstract) DOI: 10.1116/1.4709768

Hot-Electron Transport Studies of the Ag/Si(001) Interface Using Ballistic Electron Emission Microscopy,
J. J. Garramone, J. R. Abel, I. L. Sitnitsky, V. P. LaBella,
Journal of Vacuum Science and Technology A, 28 643 (2010).
(full text and abstract) DOI: 10.1116/1.3397795

Studies of Al2O3 Barriers for Use in Tunnel Junctions For NonLocal Spin Detection Experiments,
J. Abel, J. J. Garramone, I. L. Sitnitsky, V. P. LaBella,
Journal of Vacuum Science and Technology A, 28 702 (2010).
(full text and abstract) DOI: 10.1116/1.3386589

Measurement of the Hot Electron Attenuation Length of Copper,
J. J. Garramone, J. R. Abel, I. L. Sitnitsky, L. Zhao, I. Appelbaum, V. P. LaBella,
Applied Physics Letters, 96 062105 (2010).
(full text and abstract) DOI: doi:10.1063/1.3299712

Hot Electron Transport Studies of the Cu/Si(001) Interface Using Ballistic Electron Emission Microscopy,
J. J. Garramone, J. R. Abel, I. L. Sitnitsky, R. L. Moore, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 27 2044 (2009).
(full text and abstract) DOI: 10.1116/1.3136761

Effect of interface band structure on hot-electron attenuation lengths in Au thin films,
A. J. Stollenwerk, E. J. Spadafora, J. J. Garramone, R. J. Matyi, R. L. Moore, V. P. LaBella,
Physical Review B, 77 033416 (2008).
(full text and abstract) DOI: 10.1103/PhysRevB.77.033416

Measuring Spin Dependent Hot Electron Transport Through a Metal-Semiconductor Interface Using Spin-Polarized Ballistic Electron Emission Microscopy,
A. J. Stollenwerk, M. R. Krause, J. J. Garramone, E. J. Spadafora, V. P. LaBella,
Physical Review B, 76 195311 (2007).
(full text and abstract) DOI: 10.1103/PhysRevB.76.195311

Measurement of the clustering energy for manganese silicide islands on Si(001) by Ostwald Ripening,
M. R. Krause, A. J. Stollenwerk, M. Licurse, V. P. LaBella,
Applied Physics Letters, 91 041903 (2007).
(full text and abstract) DOI: 10.1063/1.2766681

Implantation Damage Study in Ferromagnetic Mn-implanted Si,
C. Awo-Affouda, M. Bolduc, V. P. LaBella,
Journal of Vacuum Science and Technology A, 25 976 (2007).
(full text and abstract) DOI: 10.1116/1.2713117

Electronic structure changes of Si(001) (2×1) from subsurface Mn observed by STM,
M. R. Krause, A. J. Stollenwerk, J. Reed, V. P. LaBella, M. Hortamani, P. Kratzer, M. Scheffler,
Physical Review B, 75 205326 (2007).
(full text and abstract) DOI: 10.1103/PhysRevB.75.205326

Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy,
J.F. Xu, P.M. Thibado, C. Awo-Affouda, R. Moore, V.P. LaBella,
Journal of Crystal Growth, 301-302 54 (2007).
(full text and abstract) DOI: 10.1016/j.jcrysgro.2006.11.234

Probing the hot electron transport properties and interface band structure of Fe/Si(001) and Fe81C19/Si(001) Schottky diodes,
A. J. Stollenwerk, M. R. Krause, D. H. Idell, R. Moore, V. P. LaBella,
Physical Review B, 74 155328 (2006).
(full text and abstract) DOI: 10.1103/PhysRevB.74.155328

Ballistic electron transport properties of Fe-based films on Si(001),
A. J. Stollenwerk, M. R. Krause, D. H. Idell, R. Moore, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 24 2009 (2006).
(full text and abstract) DOI: 10.1116/1.2213264

Annealing Temperature Effects on the Structure of Ferromagnetic Mn-implanted Si,
M. Bolduc, C. Awo-Affouda, M. B. Huang, F. Ramos, V. P. LaBella,
Journal of Vacuum Science and Technology A, 24 1648 (2006).
(full text and abstract) DOI: 10.1116/1.2194921

Observation of Crystallite Formation in Ferromagnetic Mn-implanted Si,
C. Awo-Affouda, M. Bolduc, M. B. Huang, F. Ramos, K. A. Dunn, B. Thiel, G. Agnello, V. P. LaBella,
Journal of Vacuum Science and Technology A, 24 1644 (2006).
(full text and abstract) DOI: 10.1116/1.2189265

Hot Electron Transport Across Manganese Silicide Layers on the Si(001) Surface,
A. Stollenwerk, M. Krause, R. Moore, V. P. LaBella,
Journal of Vacuum Science and Technology A, 24 1610 (2006).
(full text and abstract) DOI: 10.1116/1.2206195

Ostwald ripening of manganese silicide islands on Si(001),
M. R. Krause, A. Stollenwerk, M. Licurse, V. P. LaBella,
Journal of Vacuum Science and Technology A, 24 1480 (2006).
(full text and abstract) DOI: 10.1116/1.2167070

Redistribution of Mn upon Annealing in Ferromagnetic Mn-implanted Si,
M. Bolduc, C. Awo-Affouda, M. B. Huang, F. Ramos, V. P. LaBella,
Material Research Society Symposium Proceedings, 908e 3 (2006).

Arsenic-Rich GaAs(001) Surface Structure,
Vincent LaBella, Michael Krause, Zhao Ding, Paul M. Thibado,
Surface Science Reports, 60 1 (2005).
(full text and abstract) DOI: 10.1016/j.surfrep.2005.10.001

Investigation of the Structural Properties of Ferromagnetic Mn-implanted Si,
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. Ramos, V. P. LaBella,
Nuclear Instruments {\&} Methods in Physics Research; Section B (Beam Interactions with Materials and Atoms), 242 367 (2005).
(full text and abstract) DOI: 10.1016/j.nimb.2005.08.132

Combined molecular beam epitaxy low temperature scanning tunneling microscopy system: enabling atomic scale characterization of semiconductor surfaces and interfaces,
M. Krause, A. Stollenwerk, C. Awo-Affouda, B. Maclean, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 23 1684 (2005).
(full text and abstract) DOI: 10.1116/1.1941167

Above room temperature ferromagnetism in Mn-ion implanted Si,
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. G. Ramos, G. Agnello, V. P. LaBella,
Physical Review B, 71 033302 (2005).
(full text and abstract) DOI: 10.1103/PhysRevB.71.033302

Magnetic and Structural Properties of Mn-implanted Si,
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. Ramos, G. Agnello, V. P. LaBella,
Material Research Society Symposium Proceedings, 853E 4 (2005).

Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001),
Z. Ding, P. M. Thibado, C. Awo-Affouda, V. P. LaBella,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 22 2068 (2004).
(full text and abstract) DOI: 10.1116/1.1771674

Time-evolution of the GaAs(001) pre-roughening process,
Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, K. Mullen,
Surface Science, 540 491 (2003).
(full text and abstract) DOI: 10.1016/S0039-6028(03)00916-6

Atomic-Scale Observation of Temperature and Pressure Driven Preroughening and Roughening,
Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, K. Mullen,
Physical Review Letters, 90 216109 (2003).
(full text and abstract) DOI: 10.1103/PhysRevLett.90.216109

Role of aperiodic surface defects on the intensity of electron diffraction spots,
D. W. Bullock, Z. Ding, P. M. Thibado, V. P. LaBella,
Applied Physics Letters, 82 2586 (2003).
(full text and abstract) DOI: 10.1063/1.1568161

Dynamics of spontaneous roughening on the GaAs(001)-(2×4) surface,
Z. Ding, D. W. Bullock, W. F. Oliver, P. M. Thibado, V. P. LaBella,
Journal of Crystal Growth, 251 35 (2003).
(full text and abstract) DOI: 10.1016/S0022-0248(02)02272-8

Simultaneous surface topography and spin-injection probability,
D. W. Bullock, V. P. LaBella, Z. Ding, P. M. Thibado,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 21 67 (2003).
(full text and abstract) DOI: 10.1116/1.1532022

Mapping the spin-injection probability on the atomic scale,
D. W. Bullock, V. P. LaBella, Z. Ding, P. M. Thibado,
Journal of Superconductivity, 15 37 (2002).
(full text and abstract) DOI: 10.1023/A:1014023126179

Enhancing the Student-Instructor Interaction Frequency,
D. W. Bullock, V. P. LaBella, T. Clingan, Z. Ding, G. Stewart, P.M. Thibado,
The Physics Teacher, 40 535 (2002).
(full text and abstract) DOI: 10.1119/1.1534821

Microscopic structure of spontaneously formed islands on the GaAs(001)-(2×4) reconstructed surface,
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, P. M. Thibado,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 19 1640 (2001).
(full text and abstract) DOI: 10.1116/1.1386376

Spatially resolved spin-injection probability for gallium arsenide,
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, W. F. Oliver, G. J. Salamo, P. M. Thibado, M. Mortazavi,
Science, 292 1518 (2001).
(full text and abstract) DOI: 10.1126/science.292.5521.1518

Enabling electron diffraction as a tool for determining substrate temperature and surface morphology,
V. P. LaBella, D. W. Bullock, C. Emery, Z. Ding, P. M. Thibado,
Applied Physics Letters, 79 3065 (2001).
(full text and abstract) DOI: 10.1063/1.1416477

A union of the real-space and reciprocal-space view of the GaAs(001) surface,
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, P. M. Thibado,
International Journal of Modern Physics B, 15 2301 (2001).
(full text and abstract) DOI: 10.1142/S0217979201005647

Microscopic view of a two-dimensional lattice-gas Ising system within the grand canonical ensemble,
V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, P. M. Thibado,
Physical Review Letters, 84 4152 (2000).
(full text and abstract) DOI: 10.1103/PhysRevLett.84.4152

A Novel STM Imaging Mechanism is Used to Determine the Atomic Structure of the GaAs(001)-(2×4) Surface,
V. P. LaBella, D. W. Bullock, P. M. Thibado, P. Kratzer, M. Scheffler,
Omicron Newsletter, 4 4 (2000).

Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- (2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study,
V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, W. G. Harter, P. M. Thibado,
Journal of Vacuum Science and Technology A, 18 1526 (2000).
(full text and abstract) DOI: 10.1116/1.582379

Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions,
V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, P. M. Thibado,
Journal of Vacuum Science and Technology A, 18 1492 (2000).
(full text and abstract) DOI: 10.1116/1.582373

Atomic structure of the GaAs(001)-(2×4) surface resolved using scanning tunneling microscopy and first-principles theory,
V. P. LaBella, H. Yang, D. W. Bullock, P. M. Thibado, P. Kratzer, M. Scheffler,
Physical Review Letters, 83 2989 (1999).
(full text and abstract) DOI: 10.1103/PhysRevLett.83.2989

Role of As4 in Ga diffusion on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study,
H. Yang, V. P. LaBella, D. W. Bullock, P. M. Thibado,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 17 1778 (1999).
(full text and abstract) DOI: 10.1116/1.590825

Activation energy for Ga diffusion on the GaAs(001)-(2×4) surface: an MBE-STM study,
H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers, P. M. Thibado,
Journal of Crystal Growth, 201-202 88 (1999).
(full text and abstract) DOI: 10.1016/S0022-0248(98)01296-2

Measurements of epitaxially grown Pt/CaF2/Si(111) structures by ballistic electron emission microscopy and scanning tunneling microscopy,
V. P. LaBella, Y. Shusterman, L. J. Schowalter, Jr., C. A. Ventrice, Jr.,
Journal of Vacuum Science and Technology A, 16 1692 (1998).
(full text and abstract) DOI: 10.1116/1.581286

Ballistic electron emission microscopy measurements of epitaxially grown Pt/CaF2/Si(111) structures,
V. P. LaBella, Jr., C. A. Ventrice, Jr., L. J. Schowalter,
Applied Surface Science, 123-124 213 (1998).
(full text and abstract) DOI: 10.1016/S0169-4332(97)00543-6

Scanning tunneling microscope and ballistic electron emission spectroscopy studies of molecular beam epitaxially grown Pt/CaF2/Si(111) structures,
V. P. LaBella, L. J. Schowalter, Jr., C. A. Ventrice, Jr.,
Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures), 15 1191 (1997).
(full text and abstract) DOI: 10.1116/1.589437

Design of a scanning tunneling microscope for in situ topographic and spectroscopic measurements within a commercial molecular beam epitaxy machine,
Jr., C. A. Ventrice, Jr., V. P. LaBella, L. J. Schowalter,
Journal of Vacuum Science and Technology A, 15 830 (1997).
(full text and abstract) DOI: 10.1116/1.580716

The Effect of Strain Relaxation Mechanisms on the Electrical Properties of Epitaxial CaF2/Si(111) Heterostructures,
L.J. Schowalter, B.M. Kim, T.G. Thundat, Jr., Carl A. Ventrice, Jr., V.P. LaBella,
Material Research Society Symposium Proceedings, 466 21 (1997).

Hot-electron scattering at Au/Si(100) Schottky interfaces measured by temperature dependent ballistic electron emission microscopy,
Jr., C. A. Ventrice, Jr., V. P. LaBella, G. Ramaswamy, H. -P. Yu, L. J. Schowalter,
Applied Surface Science, 104-105 274 (1996).
(full text and abstract) DOI: 10.1016/S0169-4332(96)00215-2

Measurement of hot-electron scattering processes at Au/Si(100) Schottky interfaces by temperature-dependent ballistic-electron-emission microscopy,
Jr., C. A. Ventrice, Jr., V. P. LaBella, G. Ramaswamy, H. -P. Yu, L. J. Schowalter,
Physical Review B, 53 3952 (1996).
(full text and abstract) DOI: 10.1103/PhysRevB.53.3952

Anomalous attenuation of spin-entropy waves in superfluid 3He-A1,
M. Bastea, Y. Okuda, V. LaBella, H. Kojima,
Physical Review Letters, 73 1126 (1994).
(full text and abstract) DOI: 10.1103/PhysRevLett.73.1126